20N70KL-MT TO-220F2

UNISONIC TECHNOLOGIES CO., LTD 20N70K-MT Power MOSFET 20A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N70K-MT is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 20N70K-MT is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.  1 TO-220F2 FEATURES * RDS(ON) ≤ 0.65Ω @ VGS=10V, ID=10A * High Switching Speed * Improved dv/dt capability  SYMBOL  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 20N70KL-TF2-T 20N70KG-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source  Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-498.B 20N70K-MT  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous ID 20 A Drain Current Pulsed (Note 2) IDM 40 A Avalanche Energy Single Pulsed (Note 3) EAS 360 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.58 V/ns Power Dissipation 40 W PD Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 8.48A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4. ISD ≤ 20A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case  SYMBOL θJA θJC RATING 62.5 3.125 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0V, ID= 250μA VDS=700V, VGS=0V VGS=30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=100V, VGS=10V, ID=20A Gateource Charge QGS IG=1mA (Note 1, 2) Gate-Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) Rise Time tR VDS=100V, VGS=10V, ID=20A, R Turn-off Delay Time tD(OFF) G=25Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD VGS=0V, IS=20A Reverse Recovery Time (Note 1) trr VGS=0V, IS=20A, dIF/dt=100A/µs (Note1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 2.0 10 100 -100 V µA nA nA 4.0 0.65 V Ω 2508 220 14 pF pF pF 54 11 12 28 35 135 73 nC nC nC ns ns ns ns 20 40 1.4 482 8.5 A A V ns µC 2 of 7 QW-R205-498.B 20N70K-MT  Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R205-498.B 20N70K-MT  Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-498.B 20N70K-MT  Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-498.B 20N70K-MT  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R205-498.B 20N70K-MT  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-498.B